APT10M07JVFR. Аналоги и основные параметры

Наименование производителя: APT10M07JVFR

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 700 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 225 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 6800 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm

Тип корпуса: SOT-227

Аналог (замена) для APT10M07JVFR

- подборⓘ MOSFET транзистора по параметрам

 

APT10M07JVFR даташит

 ..1. Size:117K  apt
 apt10m07jvfr.pdf pdf_icon

APT10M07JVFR

APT10M07JVFR 100V 225A 0.007 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Fast R

 4.1. Size:73K  apt
 apt10m07jvr.pdf pdf_icon

APT10M07JVFR

APT10M07JVR 100V 225A 0.007 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 6.1. Size:73K  apt
 apt10m07.pdf pdf_icon

APT10M07JVFR

APT10M07JVR 100V 225A 0.007 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 7.1. Size:38K  apt
 apt10m09b2vr.pdf pdf_icon

APT10M07JVFR

APT10M09B2VR APT10M09LVR 100V 100A 0.009W B2VR POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVR Identical Specificati

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