RF1K49211 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RF1K49211

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: MS012AA

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RF1K49211 datasheet

 ..1. Size:258K  fairchild semi
 rf1k49211.pdf pdf_icon

RF1K49211

RF1K49211 Data Sheet January 2002 7A, 12V, 0.020 Ohm, Logic Level, Single Features N-Channel LittleFET Power MOSFET 7A, 12V The RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives

 7.1. Size:232K  fairchild semi
 rf1k49223.pdf pdf_icon

RF1K49211

RF1K49223 Data Sheet January 2002 2.5A, 30V, 0.150 Ohm, Dual P-Channel Features LittleFET Power MOSFET 2.5A, 30V The RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150 manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Model process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

 7.2. Size:261K  fairchild semi
 rf1k49221.pdf pdf_icon

RF1K49211

RF1K49221 Data Sheet January 2002 2.5A, 60V, 0.130 Ohm, ESD Rated, Dual Features N-Channel LittleFET Power MOSFET 2.5A, 60V The RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130 manufactured using an advanced MegaFET process. This 2kV ESD Protected process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

 7.3. Size:223K  intersil
 rf1k49224.pdf pdf_icon

RF1K49211

RF1K49224 Data Sheet August 1999 File Number 4330.1 3.5A/2.5A, 30V, 0.060/0.150 Ohms, Features Complementary LittleFET Power 3.5A, 30V (N-Channel) MOSFET 2.5A, 30V (P-Channel) The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel) manufactured using an advanced MegaFET process. This rDS(ON) = 0.150 (P-Channel) process, which uses feature sizes approa

MOSTRAR MÁS

Otros transistores... RF1K49086, RF1K49088, RF1K49090, RF1K49092, RF1K49093, RF1K49154, RF1K49156, RF1K49157, STP80NF70, RF1K49221, RF1K49223, RF1K49224, RF1S22N10SM, RF1S25N06SM, RF1S30N06LESM, RF1S30P05SM, RF1S30P06SM