All MOSFET. RF1K49211 Datasheet

 

RF1K49211 Datasheet and Replacement


   Type Designator: RF1K49211
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: MS012AA
 

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RF1K49211 Datasheet (PDF)

 ..1. Size:258K  fairchild semi
rf1k49211.pdf pdf_icon

RF1K49211

RF1K49211Data Sheet January 20027A, 12V, 0.020 Ohm, Logic Level, Single FeaturesN-Channel LittleFET Power MOSFET 7A, 12VThe RF1K49211 Single N-Channel power MOSFET is rDS(ON) = 0.020manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives

 7.1. Size:232K  fairchild semi
rf1k49223.pdf pdf_icon

RF1K49211

RF1K49223Data Sheet January 20022.5A, 30V, 0.150 Ohm, Dual P-Channel FeaturesLittleFET Power MOSFET 2.5A, 30VThe RF1K49223 Dual P-Channel power MOSFET is rDS(ON) = 0.150manufactured using an advanced MegaFET process. This Temperature Compensating PSPICE Modelprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utili

 7.2. Size:261K  fairchild semi
rf1k49221.pdf pdf_icon

RF1K49211

RF1K49221Data Sheet January 20022.5A, 60V, 0.130 Ohm, ESD Rated, Dual FeaturesN-Channel LittleFET Power MOSFET 2.5A, 60VThe RF1K49221 Dual N-Channel power MOSFET is rDS(ON) = 0.130manufactured using an advanced MegaFET process. This 2kV ESD Protectedprocess, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of s

 7.3. Size:223K  intersil
rf1k49224.pdf pdf_icon

RF1K49211

RF1K49224Data Sheet August 1999 File Number 4330.13.5A/2.5A, 30V, 0.060/0.150 Ohms, FeaturesComplementary LittleFET Power 3.5A, 30V (N-Channel)MOSFET2.5A, 30V (P-Channel)The RF1K49224 complementary power MOSFET is rDS(ON) = 0.060 (N-Channel)manufactured using an advanced MegaFET process. ThisrDS(ON) = 0.150 (P-Channel)process, which uses feature sizes approa

Datasheet: RF1K49086 , RF1K49088 , RF1K49090 , RF1K49092 , RF1K49093 , RF1K49154 , RF1K49156 , RF1K49157 , AO3400 , RF1K49221 , RF1K49223 , RF1K49224 , RF1S22N10SM , RF1S25N06SM , RF1S30N06LESM , RF1S30P05SM , RF1S30P06SM .

History: DMB53D0UDW | IRFBG30 | STU15N20

Keywords - RF1K49211 MOSFET datasheet

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