APT11N80KC3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT11N80KC3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 156 W
Voltaje máximo drenador - fuente |Vds|: 800 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 11 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
Carga de la puerta (Qg): 60 nC
Tiempo de subida (tr): 15 nS
Conductancia de drenaje-sustrato (Cd): 770 pF
Resistencia entre drenaje y fuente RDS(on): 0.45 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET APT11N80KC3G
APT11N80KC3G Datasheet (PDF)
apt11n80kc3g.pdf
APT11N80KC3 800V 11A 0.450Super Junction MOSFET TO-220 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg GD Avalanche Energy Rated S Extreme dv/dt RatedMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT11N80KC3 UNITVDSSDrain-Source Voltage 800 VoltsID Continuous Drain Current @ TC = 25C1
apt11n80kc3.pdf
APT11N80KC3800V 11A 0.450Super Junction MOSFETTO-220COOLMOSPower Semiconductors Ultra low RDS(ON)GDS Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-220 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80KC3 UNITVDSS Drain-Source Voltage800
apt11n80bc3g.pdf
APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID
apt11n80bc3.pdf
APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID
apt11n80bc3g.pdf
isc N-Channel MOSFET Transistor APT11N80BC3GFEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: PTP20N65A
