APT11N80KC3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT11N80KC3G
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 770 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
   Paquete / Cubierta: TO-220

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APT11N80KC3G Datasheet (PDF)

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apt11n80kc3g.pdf

APT11N80KC3 800V 11A 0.450Super Junction MOSFET TO-220 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg GD Avalanche Energy Rated S Extreme dv/dt RatedMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified. Symbol Parameter APT11N80KC3 UNITVDSSDrain-Source Voltage 800 VoltsID Continuous Drain Current @ TC = 25C1

3.1. Size:157K apt
apt11n80kc3.pdf

APT11N80KC3800V 11A 0.450Super Junction MOSFETTO-220COOLMOSPower Semiconductors Ultra low RDS(ON)GDS Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-220 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80KC3 UNITVDSS Drain-Source Voltage800

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apt11n80bc3g.pdf

APT11N80BC3800V 11A 0.45Super Junction MOSFETTO-247COOLMOSPower Semiconductors Ultra low RDS(ON) Low Miller CapacitanceD Ultra Low Gate Charge, Qg Avalanche Energy RatedG TO-247 PackageSMAXIMUM RATINGS All Ratings: TC = 25C unless otherwise specified.Symbol Parameter APT11N80BC3 UNITVDSS Drain-Source Voltage800 VoltsID

6.2. Size:157K apt
apt11n80bc3.pdf

6.3. Size:376K inchange semiconductor
apt11n80bc3g.pdf

isc N-Channel MOSFET Transistor APT11N80BC3GFEATURESDrain Current I =11A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.45(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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