APT1201R6BVFRG Todos los transistores

 

APT1201R6BVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT1201R6BVFRG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 280 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 255 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO-247
 

 Búsqueda de reemplazo de APT1201R6BVFRG MOSFET

   - Selección ⓘ de transistores por parámetros

 

APT1201R6BVFRG Datasheet (PDF)

 ..1. Size:114K  apt
 apt1201r6bvfrg apt1201r6svfrg.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 1.1. Size:113K  apt
 apt1201r6bvfr.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 3.1. Size:62K  apt
 apt1201r6bvr.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 5.1. Size:62K  apt
 apt1201r6.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

MOSTRAR MÁS

Otros transistores... APT11N80BC3G , APT11N80KC3G , APT1201R2BFLLG , APT1201R2SFLLG , APT1201R4BFLL , APT1201R4SFLL , APT1201R5BVFRG , APT1201R5SVFRG , 20N50 , APT1201R6SVFRG , APT12031JFLL , APT12040JFLL , APT12040L2FLLG , APT12045L2VFRG , APT1204R7BFLLG , APT1204R7KFLLG , APT1204R7SFLLG .

History: 2SJ259 | IPB051NE8NG | 2SJ605-ZJ

 

 
Back to Top

 


 
.