All MOSFET. APT1201R6BVFRG Datasheet

 

APT1201R6BVFRG Datasheet and Replacement


   Type Designator: APT1201R6BVFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
   Package: TO-247
 

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APT1201R6BVFRG Datasheet (PDF)

 ..1. Size:114K  apt
 apt1201r6bvfrg apt1201r6svfrg.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 1.1. Size:113K  apt
 apt1201r6bvfr.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 3.1. Size:62K  apt
 apt1201r6bvr.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 5.1. Size:62K  apt
 apt1201r6.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

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Datasheet: APT11N80BC3G , APT11N80KC3G , APT1201R2BFLLG , APT1201R2SFLLG , APT1201R4BFLL , APT1201R4SFLL , APT1201R5BVFRG , APT1201R5SVFRG , 20N50 , APT1201R6SVFRG , APT12031JFLL , APT12040JFLL , APT12040L2FLLG , APT12045L2VFRG , APT1204R7BFLLG , APT1204R7KFLLG , APT1204R7SFLLG .

History: NVMFD020N06C | IPD90N04S3-H4 | AFP8452 | HM120N04D

Keywords - APT1201R6BVFRG MOSFET datasheet

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