APT1201R6BVFRG Specs and Replacement

Type Designator: APT1201R6BVFRG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 280 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-247

APT1201R6BVFRG substitution

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APT1201R6BVFRG datasheet

 ..1. Size:114K  apt
 apt1201r6bvfrg apt1201r6svfrg.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 1.1. Size:113K  apt
 apt1201r6bvfr.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVFR APT1201R6SVFR 1200V 8A 1.600 BVFR POWER MOS V FREDFET TO-247 D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 3.1. Size:62K  apt
 apt1201r6bvr.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVR 1200V 8A 1.600 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

 5.1. Size:62K  apt
 apt1201r6.pdf pdf_icon

APT1201R6BVFRG

APT1201R6BVR 1200V 8A 1.600 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower... See More ⇒

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Detailed specifications: APT11N80BC3G, APT11N80KC3G, APT1201R2BFLLG, APT1201R2SFLLG, APT1201R4BFLL, APT1201R4SFLL, APT1201R5BVFRG, APT1201R5SVFRG, STP80NF70, APT1201R6SVFRG, APT12031JFLL, APT12040JFLL, APT12040L2FLLG, APT12045L2VFRG, APT1204R7BFLLG, APT1204R7KFLLG, APT1204R7SFLLG

Keywords - APT1201R6BVFRG MOSFET specs

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