APT1201R6SVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT1201R6SVFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 280 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 255 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT1201R6SVFRG MOSFET
APT1201R6SVFRG Datasheet (PDF)
apt1201r6bvfrg apt1201r6svfrg.pdf
APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt1201r6bvr.pdf
APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt1201r6bvfr.pdf
APT1201R6BVFRAPT1201R6SVFR1200V 8A 1.600BVFR POWER MOS V FREDFETTO-247D3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt1201r6.pdf
APT1201R6BVR1200V 8A 1.600POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
Otros transistores... APT11N80KC3G , APT1201R2BFLLG , APT1201R2SFLLG , APT1201R4BFLL , APT1201R4SFLL , APT1201R5BVFRG , APT1201R5SVFRG , APT1201R6BVFRG , 20N50 , APT12031JFLL , APT12040JFLL , APT12040L2FLLG , APT12045L2VFRG , APT1204R7BFLLG , APT1204R7KFLLG , APT1204R7SFLLG , APT12057B2FLLG .
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