APT12040L2FLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT12040L2FLLG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 893 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 1102 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO-264

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APT12040L2FLLG datasheet

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 apt12040l2fllg.pdf pdf_icon

APT12040L2FLLG

APT12040L2FLL 1200V 30A 0.400 R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally

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 apt12040l2ll.pdf pdf_icon

APT12040L2FLLG

APT12040L2LL 1200V 30A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264 Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent

 6.1. Size:207K  apt
 apt12040jvr.pdf pdf_icon

APT12040L2FLLG

APT12040JVR 1200V 26A 0.400W POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

 6.2. Size:69K  apt
 apt12040jll.pdf pdf_icon

APT12040L2FLLG

APT12040JLL 1000V 24A 0.400W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

MOSTRAR MÁS

Otros transistores... APT1201R4BFLL, APT1201R4SFLL, APT1201R5BVFRG, APT1201R5SVFRG, APT1201R6BVFRG, APT1201R6SVFRG, APT12031JFLL, APT12040JFLL, BS170, APT12045L2VFRG, APT1204R7BFLLG, APT1204R7KFLLG, APT1204R7SFLLG, APT12057B2FLLG, APT12057B2LLG, APT12057JFLL, APT12057LFLLG