Справочник MOSFET. APT12040L2FLLG

 

APT12040L2FLLG Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT12040L2FLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 893 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 1200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 1102 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO-264
     - подбор MOSFET транзистора по параметрам

 

APT12040L2FLLG Datasheet (PDF)

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APT12040L2FLLG

APT12040L2FLL1200V 30A 0.400R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channel Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally

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APT12040L2FLLG

APT12040L2LL1200V 30A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent

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APT12040L2FLLG

APT12040JVR1200V 26A 0.400WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

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APT12040L2FLLG

APT12040JLL1000V 24A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's

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History: NCE30P25BQ | MC11N005 | PTP11N45 | JCS5N50CT | NCEP026N10F | NVMFS5C628N | SI7913DN

 

 
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