APT12040L2FLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT12040L2FLLG
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 893 W
Предельно допустимое напряжение сток-исток |Uds|: 1200 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 30 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 275 nC
Время нарастания (tr): 14 ns
Выходная емкость (Cd): 1102 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.4 Ohm
Тип корпуса: TO-264
Аналог (замена) для APT12040L2FLLG
APT12040L2FLLG Datasheet (PDF)
apt12040l2fllg.pdf
APT12040L2FLL1200V 30A 0.400R POWER MOS 7 FREDFETTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channel Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally
apt12040l2ll.pdf
APT12040L2LL1200V 30A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel TO-264Maxenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent
apt12040jvr.pdf
APT12040JVR1200V 26A 0.400WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T
apt12040jll.pdf
APT12040JLL1000V 24A 0.400WTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's
apt12040jfll.pdf
APT12040JFLL1200V 24A 0.400R POWER MOS 7 FREDFETPower MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized"ISOTOPalong with e
apt12040jvfr.pdf
APT12040JVFR1200V 26A 0.400 POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"also achieves faster switching speeds through optimized gate layout.ISOTOP Faste
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