APT12080LVFRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT12080LVFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 530 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO-264
Búsqueda de reemplazo de APT12080LVFRG MOSFET
APT12080LVFRG Datasheet (PDF)
apt12080b2vfrg apt12080lvfrg.pdf
APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt12080lvr.pdf
APT12080LVR1200V 16A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt12080jvfr.pdf
APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit
apt12080b2vfr.pdf
APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
Otros transistores... APT12060B2VFRG , APT12060LVFRG , APT12067B2FLLG , APT12067B2LLG , APT12067JFLL , APT12067LFLLG , APT12067LLLG , APT12080B2VFRG , P60NF06 , APT12F60K , APT12M80B , APT12M80S , APT13F120B , APT13F120S , APT14F100B , APT14F100S , APT14M100B .
History: BUK9M85-60E
History: BUK9M85-60E
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM40P75D | AGM40P75A | AGM40P65E | AGM40P65AP | AGM40P55D | AGM40P55AP | AGM40P55A | AGM40P35D | AGM40P35AP | AGM40P35A-KU | AGM40P35A | AGM40P30D | AGM40P30AP | AGM40P30A | AGM60P20R | AGM60P20D
Popular searches
2sa872 | 2sc1222 | 2sc2581 | c1061 transistor | 2sc1451 | c3199 transistor | 2n2712 datasheet | 2sc2525

