APT12080LVFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT12080LVFRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 530 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Encapsulados: TO-264
Búsqueda de reemplazo de APT12080LVFRG MOSFET
- Selecciónⓘ de transistores por parámetros
APT12080LVFRG datasheet
apt12080b2vfrg apt12080lvfrg.pdf
APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
apt12080lvr.pdf
APT12080LVR 1200V 16A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt12080jvfr.pdf
APT12080JVFR 1200V 15A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" ISOTOP also achieves faster switching speeds through optimized gate layout. D Faster Swit
apt12080b2vfr.pdf
APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
Otros transistores... APT12060B2VFRG, APT12060LVFRG, APT12067B2FLLG, APT12067B2LLG, APT12067JFLL, APT12067LFLLG, APT12067LLLG, APT12080B2VFRG, P60NF06, APT12F60K, APT12M80B, APT12M80S, APT13F120B, APT13F120S, APT14F100B, APT14F100S, APT14M100B
History: NCE80H11
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