All MOSFET. APT12080LVFRG Datasheet

 

APT12080LVFRG MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT12080LVFRG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 520 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 325 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-264

 APT12080LVFRG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT12080LVFRG Datasheet (PDF)

 ..1. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf

APT12080LVFRG APT12080LVFRG

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 4.1. Size:61K  apt
 apt12080lvr.pdf

APT12080LVFRG APT12080LVFRG

APT12080LVR1200V 16A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 6.1. Size:112K  apt
 apt12080jvfr.pdf

APT12080LVFRG APT12080LVFRG

APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit

 6.2. Size:111K  apt
 apt12080b2vfr.pdf

APT12080LVFRG APT12080LVFRG

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.

 6.3. Size:203K  apt
 apt12080jvr.pdf

APT12080LVFRG APT12080LVFRG

APT12080JVR1200V 15A 0.800WPOWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

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History: APT12067B2LLG | IRF3305

 

 
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