APT17F100B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT17F100B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 150 nC
   trⓘ - Tiempo de subida: 31 nS
   Cossⓘ - Capacitancia de salida: 405 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm
   Paquete / Cubierta: TO-247

Búsqueda de reemplazo de MOSFET APT17F100B

APT17F100B Datasheet (PDF)

..1. Size:215K microsemi
apt17f100b apt17f100s.pdf

APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

7.1. Size:213K microsemi
apt17f120j.pdf

APT17F120J 1200V, 18A, 0.58 Max, trr 330nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

8.1. Size:212K microsemi
apt17f80b apt17f80s.pdf

APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

8.2. Size:375K inchange semiconductor
apt17f80b.pdf

isc N-Channel MOSFET Transistor APT17F80BFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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