APT17F100B. Аналоги и основные параметры

Наименование производителя: APT17F100B

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 625 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 31 ns

Cossⓘ - Выходная емкость: 405 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.78 Ohm

Тип корпуса: TO-247

Аналог (замена) для APT17F100B

- подборⓘ MOSFET транзистора по параметрам

 

APT17F100B даташит

 ..1. Size:215K  microsemi
 apt17f100b apt17f100s.pdf pdf_icon

APT17F100B

APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.

 7.1. Size:213K  microsemi
 apt17f120j.pdf pdf_icon

APT17F100B

APT17F120J 1200V, 18A, 0.58 Max, trr 330ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig

 8.1. Size:212K  microsemi
 apt17f80b apt17f80s.pdf pdf_icon

APT17F100B

APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAK MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti- mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 8.2. Size:375K  inchange semiconductor
 apt17f80b.pdf pdf_icon

APT17F100B

isc N-Channel MOSFET Transistor APT17F80B FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.58 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT14M100B, APT14M100S, APT14M120B, APT14M120S, APT15F50K, APT15F50KF, APT15F60B, APT15F60S, RU7088R, APT17F100S, APT17F120J, APT17F80B, APT17F80S, APT17M120JCU2, APT17M120JCU3, APT17N80BC3G, APT17N80SC3G