APT17F100B MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: APT17F100B
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 625 W
Предельно допустимое напряжение сток-исток |Uds|: 1000 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 17 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 150 nC
Время нарастания (tr): 31 ns
Выходная емкость (Cd): 405 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.78 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT17F100B
APT17F100B Datasheet (PDF)
apt17f100b apt17f100s.pdf
APT17F100B APT17F100S 1000V, 17A, 0.78 Max, trr 245nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability.
apt17f120j.pdf
APT17F120J 1200V, 18A, 0.58 Max, trr 330nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hig
apt17f80b apt17f80s.pdf
APT17F80B APT17F80S 800V, 18A, 0.58 Max, trr 250nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power D3PAKMOSFET. This 'FREDFET' version has a drain-source (body) diode that has been opti-mized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt17f80b.pdf
isc N-Channel MOSFET Transistor APT17F80BFEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R = 0.58(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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