RF1S30N06LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: RF1S30N06LESM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 51 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.047 Ohm
   Paquete / Cubierta: TO263AB

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RF1S30N06LESM Datasheet (PDF)

..1. Size:188K fairchild semi
rfp30n06le rf1s30n06lesm.pdf

RFP30N06LE, RF1S30N06LESMData Sheet January 200430A, 60V, ESD Rated, 0.047 Ohm, Logic FeaturesLevel N-Channel Power MOSFETs 30A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

3.1. Size:64K harris semi
rf1s30n06le.pdf

RFP30N06LE, RF1S30N06LE,S E M I C O N D U C T O RRF1S30N06LESM30A, 60V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETsJuly 1995Features PackagesJEDEC TO-220AB 30A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra

8.1. Size:365K fairchild semi
rfg30p05 rfp30p05 rf1s30p05sm.pdf

RFG30P05, RFP30P05, RF1S30P05SMData Sheet January 200230A, 50V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 50VThese are P-Channel power MOSFETs manufactured rDS(ON) = 0.065using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

8.2. Size:386K fairchild semi
rfg30p06 rfp30p06 rf1s30p06sm.pdf

RFG30P06, RFP30P06, RF1S30P06SMData Sheet January 200230A, 60V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

8.3. Size:44K harris semi
rf1s30p06.pdf

RFG30P06, RFP30P06,S E M I C O N D U C T O RRF1S30P06, RF1S30P06SM30A, 60V, Avalanche Rated, P-ChannelMarch 1995 Enhancement-Mode Power MOSFETsFeatures PackagesJEDEC STYLE TO-247 30A, 60VSOURCE rDS(ON) = 0.065DRAINGATE Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse WIdth Curve(BOTTOMSIDE METAL) UIS Rating Curve +175oC Op

Otros transistores... RF1K49156 , RF1K49157 , RF1K49211 , RF1K49221 , RF1K49223 , RF1K49224 , RF1S22N10SM , RF1S25N06SM , IRFZ46N , RF1S30P05SM , RF1S30P06SM , RF1S40N10LESM , RF1S40N10SM , RF1S45N06LESM , RF1S45N06SM , RF1S4N100SM , RF1S50N06LESM .

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