RF1S30N06LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RFP30N06LE, RF1S30N06LESMData Sheet January 200430A, 60V, ESD Rated, 0.047 Ohm, Logic FeaturesLevel N-Channel Power MOSFETs 30A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

RFP30N06LE, RF1S30N06LE,S E M I C O N D U C T O RRF1S30N06LESM30A, 60V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETsJuly 1995Features PackagesJEDEC TO-220AB 30A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra

RFG30P05, RFP30P05, RF1S30P05SMData Sheet January 200230A, 50V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 50VThese are P-Channel power MOSFETs manufactured rDS(ON) = 0.065using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

RFG30P06, RFP30P06, RF1S30P06SMData Sheet January 200230A, 60V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

RFG30P06, RFP30P06,S E M I C O N D U C T O RRF1S30P06, RF1S30P06SM30A, 60V, Avalanche Rated, P-ChannelMarch 1995 Enhancement-Mode Power MOSFETsFeatures PackagesJEDEC STYLE TO-247 30A, 60VSOURCE rDS(ON) = 0.065DRAINGATE Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse WIdth Curve(BOTTOMSIDE METAL) UIS Rating Curve +175oC Op