RF1S30N06LESM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S30N06LESM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 96 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2 V
Carga de la puerta (Qg): 51 nC
Resistencia entre drenaje y fuente RDS(on): 0.047 Ohm
Paquete / Cubierta: TO263AB
Búsqueda de reemplazo de MOSFET RF1S30N06LESM
RF1S30N06LESM Datasheet (PDF)
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RFP30N06LE, RF1S30N06LESMData Sheet January 200430A, 60V, ESD Rated, 0.047 Ohm, Logic FeaturesLevel N-Channel Power MOSFETs 30A, 60VThese are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047the MegaFET process. This process, which uses feature 2kV ESD Protectedsizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res
rf1s30n06le.pdf
RFP30N06LE, RF1S30N06LE,S E M I C O N D U C T O RRF1S30N06LESM30A, 60V, ESD Rated, Avalanche Rated, Logic LevelN-Channel Enhancement-Mode Power MOSFETsJuly 1995Features PackagesJEDEC TO-220AB 30A, 60VSOURCEDRAINGATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra
rfg30p05 rfp30p05 rf1s30p05sm.pdf
RFG30P05, RFP30P05, RF1S30P05SMData Sheet January 200230A, 50V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 50VThese are P-Channel power MOSFETs manufactured rDS(ON) = 0.065using the MegaFET process. This process, which uses Temperature Compensating PSPICE Modelfeature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin
rfg30p06 rfp30p06 rf1s30p06sm.pdf
RFG30P06, RFP30P06, RF1S30P06SMData Sheet January 200230A, 60V, 0.065 Ohm, P-Channel Power FeaturesMOSFETs 30A, 60VThese are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Modelsizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin
rf1s30p06.pdf
RFG30P06, RFP30P06,S E M I C O N D U C T O RRF1S30P06, RF1S30P06SM30A, 60V, Avalanche Rated, P-ChannelMarch 1995 Enhancement-Mode Power MOSFETsFeatures PackagesJEDEC STYLE TO-247 30A, 60VSOURCE rDS(ON) = 0.065DRAINGATE Temperature Compensating PSPICE ModelDRAIN Peak Current vs Pulse WIdth Curve(BOTTOMSIDE METAL) UIS Rating Curve +175oC Op
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: FQB4N20LTM
