RF1S30N06LESM. Аналоги и основные параметры

Наименование производителя: RF1S30N06LESM

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 96 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.047 Ohm

Тип корпуса: TO263AB

Аналог (замена) для RF1S30N06LESM

- подборⓘ MOSFET транзистора по параметрам

 

RF1S30N06LESM даташит

 ..1. Size:188K  fairchild semi
 rfp30n06le rf1s30n06lesm.pdf pdf_icon

RF1S30N06LESM

RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs 30A, 60V These are N-Channel power MOSFETs manufactured using rDS(ON) = 0.047 the MegaFET process. This process, which uses feature 2kV ESD Protected sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, res

 3.1. Size:64K  harris semi
 rf1s30n06le.pdf pdf_icon

RF1S30N06LESM

RFP30N06LE, RF1S30N06LE, S E M I C O N D U C T O R RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1995 Features Packages JEDEC TO-220AB 30A, 60V SOURCE DRAIN GATE rDS(ON) = 0.047 2kV ESD Protected Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve (FLANGE) UIS Ra

 8.1. Size:365K  fairchild semi
 rfg30p05 rfp30p05 rf1s30p05sm.pdf pdf_icon

RF1S30N06LESM

RFG30P05, RFP30P05, RF1S30P05SM Data Sheet January 2002 30A, 50V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 50V These are P-Channel power MOSFETs manufactured rDS(ON) = 0.065 using the MegaFET process. This process, which uses Temperature Compensating PSPICE Model feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

 8.2. Size:386K  fairchild semi
 rfg30p06 rfp30p06 rf1s30p06sm.pdf pdf_icon

RF1S30N06LESM

RFG30P06, RFP30P06, RF1S30P06SM Data Sheet January 2002 30A, 60V, 0.065 Ohm, P-Channel Power Features MOSFETs 30A, 60V These are P-Channel power MOSFETs manufactured using rDS(ON) = 0.065 the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI circuits, gives optimum utilization of silicon, resultin

ПОКАЗАТЬ ЕЩЁ

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