APT18M100S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT18M100S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 18 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 405 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: D3PAK
Búsqueda de reemplazo de APT18M100S MOSFET
APT18M100S Datasheet (PDF)
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apt18m80b.pdf

isc N-Channel MOSFET Transistor APT18M80BFEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.53(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
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APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Otros transistores... APT17F80S , APT17M120JCU2 , APT17M120JCU3 , APT17N80BC3G , APT17N80SC3G , APT18F60B , APT18F60S , APT18M100B , 20N60 , APT18M80B , APT18M80S , APT19F100J , APT19M120J , APT20F50B , APT20F50S , APT20M11JFLL , APT20M11JLL .
History: 7N65G-TF3T-T | SIB408DK | 65N06H | SM1A27PSU | FIR8N60FG | IPD220N06L3G | IPD50N04S4-08
History: 7N65G-TF3T-T | SIB408DK | 65N06H | SM1A27PSU | FIR8N60FG | IPD220N06L3G | IPD50N04S4-08



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