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APT18M100S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT18M100S
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 625 W
   Предельно допустимое напряжение сток-исток |Uds|: 1000 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 18 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 150 nC
   Время нарастания (tr): 20 ns
   Выходная емкость (Cd): 405 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.7 Ohm
   Тип корпуса: D3PAK

 Аналог (замена) для APT18M100S

 

 

APT18M100S Datasheet (PDF)

 ..1. Size:204K  microsemi
apt18m100b apt18m100s.pdf

APT18M100S APT18M100S

APT18M100B APT18M100S 1000V, 18A, 0.70 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 8.1. Size:211K  microsemi
apt18m80b apt18m80s.pdf

APT18M100S APT18M100S

APT18M80B APT18M80S 800V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 8.2. Size:375K  inchange semiconductor
apt18m80b.pdf

APT18M100S APT18M100S

isc N-Channel MOSFET Transistor APT18M80BFEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.53(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:213K  microsemi
apt18f60b apt18f60s.pdf

APT18M100S APT18M100S

APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 9.2. Size:375K  inchange semiconductor
apt18f60b.pdf

APT18M100S APT18M100S

isc N-Channel MOSFET Transistor APT18F60BFEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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