APT18M80B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT18M80B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 500 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 19 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 31 nS
Cossⓘ - Capacitancia de salida: 375 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT18M80B MOSFET
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APT18M80B datasheet
apt18m80b apt18m80s.pdf
APT18M80B APT18M80S 800V, 19A, 0.53 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt18m80b.pdf
isc N-Channel MOSFET Transistor APT18M80B FEATURES Drain Current I =19A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.53 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
apt18m100b apt18m100s.pdf
APT18M100B APT18M100S 1000V, 18A, 0.70 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance
apt18f60b apt18f60s.pdf
APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Otros transistores... APT17M120JCU2, APT17M120JCU3, APT17N80BC3G, APT17N80SC3G, APT18F60B, APT18F60S, APT18M100B, APT18M100S, IRF540N, APT18M80S, APT19F100J, APT19M120J, APT20F50B, APT20F50S, APT20M11JFLL, APT20M11JLL, APT20M120JCU2
History: HM25N06Q | AP22T03GH-HF
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