All MOSFET. APT18M80B Datasheet

 

APT18M80B MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT18M80B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO-247

 APT18M80B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT18M80B Datasheet (PDF)

 ..1. Size:211K  microsemi
 apt18m80b apt18m80s.pdf

APT18M80B APT18M80B

APT18M80B APT18M80S 800V, 19A, 0.53 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

 ..2. Size:375K  inchange semiconductor
 apt18m80b.pdf

APT18M80B APT18M80B

isc N-Channel MOSFET Transistor APT18M80BFEATURESDrain Current I =19A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.53(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:204K  microsemi
 apt18m100b apt18m100s.pdf

APT18M80B APT18M80B

APT18M100B APT18M100S 1000V, 18A, 0.70 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance

 9.1. Size:213K  microsemi
 apt18f60b apt18f60s.pdf

APT18M80B APT18M80B

APT18F60B APT18F60S 600V, 19A, 0.37 Max, trr 200nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

 9.2. Size:375K  inchange semiconductor
 apt18f60b.pdf

APT18M80B APT18M80B

isc N-Channel MOSFET Transistor APT18F60BFEATURESDrain Current I = 19A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.37(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: CP664

 

 
Back to Top