APT22F80B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT22F80B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 455 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT22F80B MOSFET
- Selecciónⓘ de transistores por parámetros
APT22F80B datasheet
apt22f80b apt22f80s.pdf
APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt22f80b.pdf
isc N-Channel MOSFET Transistor APT22F80B FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt22f120b2 apt22f120l.pdf
APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt
apt22f100j.pdf
APT22F100J 1000V, 23A, 0.38 Max, trr 300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi
Otros transistores... APT20M36BFLLG, APT20M36SFLLG, APT20M38SVFRG, APT20M40HVR, APT21M100J, APT22F100J, APT22F120B2, APT22F120L, 4435, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, APT24F50S, APT24M120B2
History: APT20M40HVR | PSMN1R3-30YL
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407 | CM3407 | CM3400 | SVF11N65F | SVF11N65T | FKBB3105 | EHBA036R1
Popular searches
oc75 transistor | irfp260m | 2sc1213 | a1491 transistor | 2sc897 | 2sa818 | 2sa763 | a933
