APT22F80B. Аналоги и основные параметры
Наименование производителя: APT22F80B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 455 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.43 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT22F80B
- подборⓘ MOSFET транзистора по параметрам
APT22F80B даташит
apt22f80b apt22f80s.pdf
APT22F80B APT22F80S 800V, 23A, 0.43 Max, trr 260ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt22f80b.pdf
isc N-Channel MOSFET Transistor APT22F80B FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R = 0.43 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt22f120b2 apt22f120l.pdf
APT22F120B2 APT22F120L 1200V, 23A, 0.70 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt
apt22f100j.pdf
APT22F100J 1000V, 23A, 0.38 Max, trr 300ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, hi
Другие IGBT... APT20M36BFLLG, APT20M36SFLLG, APT20M38SVFRG, APT20M40HVR, APT21M100J, APT22F100J, APT22F120B2, APT22F120L, 4435, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, APT24F50S, APT24M120B2
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