APT24F50S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT24F50S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 335 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 90 nC
   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 390 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: D3PAK

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APT24F50S Datasheet (PDF)

..1. Size:213K microsemi
apt24f50b apt24f50s.pdf

APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo

6.1. Size:375K inchange semiconductor
apt24f50b.pdf

isc N-Channel MOSFET Transistor APT24F50BFEATURESDrain Current I = 24A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.14(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:220K microsemi
apt24m80b apt24m80s.pdf

APT24M80B APT24M80S 800V, 25A, 0.39 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKA proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of

9.2. Size:207K microsemi
apt24m120b2 apt24m120l.pdf

APT24M120B2 APT24M120L 1200V, 24A, 0.63 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

9.3. Size:376K inchange semiconductor
apt24m80b.pdf

isc N-Channel MOSFET Transistor APT24M80BFEATURESDrain Current I =25A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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