APT24F50S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT24F50S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 335 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 390 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: D3PAK
Búsqueda de reemplazo de APT24F50S MOSFET
- Selecciónⓘ de transistores por parámetros
APT24F50S datasheet
apt24f50b apt24f50s.pdf
APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
apt24f50b.pdf
isc N-Channel MOSFET Transistor APT24F50B FEATURES Drain Current I = 24A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.14 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
apt24m80b apt24m80s.pdf
APT24M80B APT24M80S 800V, 25A, 0.39 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt24m120b2 apt24m120l.pdf
APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and
Otros transistores... APT22F120L, APT22F80B, APT22F80S, APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, 5N65, APT24M120B2, APT24M120L, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, APT26M100JCU2
History: APT24M80S | PSMN1R1-25YLC
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