APT24F50S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: APT24F50S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 335 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 19 ns
Cossⓘ - Выходная емкость: 390 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.24 Ohm
Тип корпуса: D3PAK
- подбор MOSFET транзистора по параметрам
APT24F50S Datasheet (PDF)
apt24f50b apt24f50s.pdf

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apt24f50b.pdf

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apt24m80b apt24m80s.pdf

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apt24m120b2 apt24m120l.pdf

APT24M120B2 APT24M120L 1200V, 24A, 0.63 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MRF148 | AP6P090H | MPVP20N65F | NP90N03VUG | 2SK2734 | CS12N65FA9R | STP40NF10L
History: MRF148 | AP6P090H | MPVP20N65F | NP90N03VUG | 2SK2734 | CS12N65FA9R | STP40NF10L



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