APT24M80B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT24M80B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 38 nS
Cossⓘ - Capacitancia de salida: 455 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT24M80B MOSFET
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APT24M80B datasheet
apt24m80b apt24m80s.pdf
APT24M80B APT24M80S 800V, 25A, 0.39 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt24m80b.pdf
isc N-Channel MOSFET Transistor APT24M80B FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.39 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
apt24m120b2 apt24m120l.pdf
APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and
apt24f50b apt24f50s.pdf
APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Otros transistores... APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, APT24F50S, APT24M120B2, APT24M120L, AON6380, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, APT26M100JCU2, APT26M100JCU3, APT28F60B, APT28F60S
History: APT24M120B2
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