APT24M80B. Аналоги и основные параметры
Наименование производителя: APT24M80B
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 625 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 38 ns
Cossⓘ - Выходная емкость: 455 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.39 Ohm
Тип корпуса: TO-247
Аналог (замена) для APT24M80B
- подборⓘ MOSFET транзистора по параметрам
APT24M80B даташит
apt24m80b apt24m80s.pdf
APT24M80B APT24M80S 800V, 25A, 0.39 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of
apt24m80b.pdf
isc N-Channel MOSFET Transistor APT24M80B FEATURES Drain Current I =25A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Static Drain-Source On-Resistance R =0.39 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
apt24m120b2 apt24m120l.pdf
APT24M120B2 APT24M120L 1200V, 24A, 0.63 Max N-Channel MOSFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and
apt24f50b apt24f50s.pdf
APT24F50B APT24F50S 500V, 24A, 0.24 Max, trr 210ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAK This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Lo
Другие IGBT... APT22M100JCU2, APT22M100JCU3, APT23F60B, APT23F60S, APT24F50B, APT24F50S, APT24M120B2, APT24M120L, AON6380, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, APT26M100JCU2, APT26M100JCU3, APT28F60B, APT28F60S
History: QM0004P
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Список транзисторов
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