APT26M100JCU2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT26M100JCU2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 543 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 26 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 825 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.396 Ohm
   Paquete / Cubierta: SOT-227

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APT26M100JCU2 Datasheet (PDF)

..1. Size:106K microsemi
apt26m100jcu2.pdf

APT26M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

2.1. Size:107K microsemi
apt26m100jcu3.pdf

APT26M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

9.1. Size:167K apt
apt26gu30k.pdf

TYPICAL PERFORMANCE CURVESAPT26GU30K_SAAPT26GU30KAPT26GU30SA300VTO-220 POWER MOS 7 IGBTD2PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,CGChigh voltage switching applications and has been optimized for high frequencyE G Eswitchmode power supplies. Low Condu

9.2. Size:161K apt
apt26gu30b.pdf

TYPICAL PERFORMANCE CURVESAPT26GU30BAPT26GU30B300V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA ratedC

9.3. Size:117K microsemi
apt26f120b2 apt26f120l.pdf

APT26F120B2 APT26F120L 1200V, 27A, 0.58 Max, trr 335nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

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