APT26M100JCU2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT26M100JCU2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 543 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 825 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.396 Ohm
Paquete / Cubierta: SOT-227
- Selección de transistores por parámetros
APT26M100JCU2 Datasheet (PDF)
apt26m100jcu2.pdf

APT26M100JCU2VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat
apt26m100jcu3.pdf

APT26M100JCU3VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25C MOSFET + SiC chopper diode ID = 26A @ Tc = 25C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G- Low RDSon S- Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott
apt26gu30k.pdf

TYPICAL PERFORMANCE CURVESAPT26GU30K_SAAPT26GU30KAPT26GU30SA300VTO-220 POWER MOS 7 IGBTD2PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,CGChigh voltage switching applications and has been optimized for high frequencyE G Eswitchmode power supplies. Low Condu
apt26gu30b.pdf

TYPICAL PERFORMANCE CURVESAPT26GU30BAPT26GU30B300V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss SSOA ratedC
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBQA1405 | CS3R50FA9 | 2SJ479S | IPA65R280E6 | HRP72N06K | IRF7316QPBF | SI2318DS-T1-GE3
History: VBQA1405 | CS3R50FA9 | 2SJ479S | IPA65R280E6 | HRP72N06K | IRF7316QPBF | SI2318DS-T1-GE3



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