APT26M100JCU2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT26M100JCU2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 543 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 825 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.396 Ohm

Encapsulados: SOT-227

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APT26M100JCU2 datasheet

 ..1. Size:106K  microsemi
apt26m100jcu2.pdf pdf_icon

APT26M100JCU2

APT26M100JCU2 VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 2.1. Size:107K  microsemi
apt26m100jcu3.pdf pdf_icon

APT26M100JCU2

APT26M100JCU3 VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 9.1. Size:167K  apt
apt26gu30k.pdf pdf_icon

APT26M100JCU2

TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA 300V TO-220 POWER MOS 7 IGBT D2PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, C G C high voltage switching applications and has been optimized for high frequency E G E switchmode power supplies. Low Condu

 9.2. Size:161K  apt
apt26gu30b.pdf pdf_icon

APT26M100JCU2

TYPICAL PERFORMANCE CURVES APT26GU30B APT26GU30B 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA rated C

Otros transistores... APT24F50S, APT24M120B2, APT24M120L, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, STP80NF70, APT26M100JCU3, APT28F60B, APT28F60S, APT28M120B2, APT28M120L, APT29F100B2, APT29F100L, APT29F80J