APT26M100JCU2. Аналоги и основные параметры

Наименование производителя: APT26M100JCU2

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 543 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1000 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 26 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 40 ns

Cossⓘ - Выходная емкость: 825 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.396 Ohm

Тип корпуса: SOT-227

Аналог (замена) для APT26M100JCU2

- подборⓘ MOSFET транзистора по параметрам

 

APT26M100JCU2 даташит

 ..1. Size:106K  microsemi
 apt26m100jcu2.pdf pdf_icon

APT26M100JCU2

APT26M100JCU2 VDSS = 1000V ISOTOP Boost chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application K AC and DC motor control Switched Mode Power Supplies Power Factor Correction D Brake switch Features Power MOS 8 MOSFET G - Low RDSon - Low input and Miller capacitance - Low gat

 2.1. Size:107K  microsemi
 apt26m100jcu3.pdf pdf_icon

APT26M100JCU2

APT26M100JCU3 VDSS = 1000V ISOTOP Buck chopper RDSon = 330m typ @ Tj = 25 C MOSFET + SiC chopper diode ID = 26A @ Tc = 25 C Power module Application D AC and DC motor control Switched Mode Power Supplies Features Power MOS 8 MOSFET G - Low RDSon S - Low input and Miller capacitance - Low gate charge - Avalanche energy rated SiC Schott

 9.1. Size:167K  apt
 apt26gu30k.pdf pdf_icon

APT26M100JCU2

TYPICAL PERFORMANCE CURVES APT26GU30K_SA APT26GU30K APT26GU30SA 300V TO-220 POWER MOS 7 IGBT D2PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, C G C high voltage switching applications and has been optimized for high frequency E G E switchmode power supplies. Low Condu

 9.2. Size:161K  apt
 apt26gu30b.pdf pdf_icon

APT26M100JCU2

TYPICAL PERFORMANCE CURVES APT26GU30B APT26GU30B 300V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss SSOA rated C

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... APT24F50S, APT24M120B2, APT24M120L, APT24M80B, APT24M80S, APT25M100J, APT26F120B2, APT26F120L, STP80NF70, APT26M100JCU3, APT28F60B, APT28F60S, APT28M120B2, APT28M120L, APT29F100B2, APT29F100L, APT29F80J