APT29F100B2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT29F100B2

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1040 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 715 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm

Encapsulados: TO-247

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APT29F100B2 datasheet

 ..1. Size:212K  microsemi
 apt29f100b2 apt29f100l.pdf pdf_icon

APT29F100B2

APT29F100B2 APT29F100L 1000V, 30A, 0.44 Max, trr 270ns N-Channel FREDFET T-Ma xTM TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 8.1. Size:182K  microsemi
 apt29f80j.pdf pdf_icon

APT29F100B2

APT29F80J 800V, 29A, 0.21 Max, trr 370ns N-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate "UL Recogni

Otros transistores... APT26F120B2, APT26F120L, APT26M100JCU2, APT26M100JCU3, APT28F60B, APT28F60S, APT28M120B2, APT28M120L, IRFP250, APT29F100L, APT29F80J, APT30F50B, APT30F50S, APT30F60J, APT30M17JFLL, APT30M30B2FLLG, APT30M30B2LLG