APT29F100B2 Todos los transistores

 

APT29F100B2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT29F100B2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1040 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 715 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm
   Paquete / Cubierta: TO-247
 

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APT29F100B2 Datasheet (PDF)

 ..1. Size:212K  microsemi
 apt29f100b2 apt29f100l.pdf pdf_icon

APT29F100B2

APT29F100B2 APT29F100L 1000V, 30A, 0.44 Max, trr 270nsN-Channel FREDFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt

 8.1. Size:182K  microsemi
 apt29f80j.pdf pdf_icon

APT29F100B2

APT29F80J 800V, 29A, 0.21 Max, trr 370nsN-Channel FREDFET POWER MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate "UL Recogni

Otros transistores... APT26F120B2 , APT26F120L , APT26M100JCU2 , APT26M100JCU3 , APT28F60B , APT28F60S , APT28M120B2 , APT28M120L , STF13NM60N , APT29F100L , APT29F80J , APT30F50B , APT30F50S , APT30F60J , APT30M17JFLL , APT30M30B2FLLG , APT30M30B2LLG .

History: HM5N30R | LBSS8402DW1T1G | VN10KCSM4 | 20P10 | AO4862 | AM20P06-175I | APT6010B2FLLG

 

 
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