APT30M61SFLLG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT30M61SFLLG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 403 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 54 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 920 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.061 Ohm

Encapsulados: D3PAK

 Búsqueda de reemplazo de APT30M61SFLLG MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT30M61SFLLG datasheet

 ..1. Size:102K  apt
 apt30m61bfllg apt30m61sfllg.pdf pdf_icon

APT30M61SFLLG

APT30M61BFLL APT30M61SFLL 300V 54A 0.061 R POWER MOS 7 FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses along with

 6.1. Size:69K  apt
 apt30m61bll.pdf pdf_icon

APT30M61SFLLG

APT30M61BLL APT30M61SLL 300V 54A 0.061W TM BLL POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAK TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switchin

 6.2. Size:375K  inchange semiconductor
 apt30m61bll.pdf pdf_icon

APT30M61SFLLG

isc N-Channel MOSFET Transistor APT30M61BLL FEATURES Drain Current I =54A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.061 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 6.3. Size:375K  inchange semiconductor
 apt30m61bfll.pdf pdf_icon

APT30M61SFLLG

isc N-Channel MOSFET Transistor APT30M61BFLL FEATURES Drain Current I = 54A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.061 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

MOSTRAR MÁS

Otros transistores... APT30M30JFLL, APT30M30LFLL, APT30M30LLLG, APT30M36JFLL, APT30M40B2VFRG, APT30M40B2VRG, APT30M60J, APT30M61BFLLG, 75N75, APT30M75BFLLG, APT30M75BLLG, APT30M75SFLLG, APT30M75SLLG, APT30M85SVRG, APT30N60BC6, APT30N60KC6, APT30N60SC6