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APT30M61SFLLG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT30M61SFLLG
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 403 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 300 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 54 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 920 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.061 Ohm
   Тип корпуса: D3PAK

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APT30M61SFLLG Datasheet (PDF)

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APT30M61SFLLG
APT30M61SFLLG

APT30M61BFLLAPT30M61SFLL300V 54A 0.061R POWER MOS 7 FREDFETD3PAKPower MOS 7 is a new generation of low loss, high voltage, N-ChannelTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesalong with

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apt30m61bll.pdf

APT30M61SFLLG
APT30M61SFLLG

APT30M61BLLAPT30M61SLL300V 54A 0.061WTM BLL POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-Channel D3PAKTO-247enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast switchin

 6.2. Size:375K  inchange semiconductor
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APT30M61SFLLG
APT30M61SFLLG

isc N-Channel MOSFET Transistor APT30M61BLLFEATURESDrain Current I =54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.3. Size:375K  inchange semiconductor
apt30m61bfll.pdf

APT30M61SFLLG
APT30M61SFLLG

isc N-Channel MOSFET Transistor APT30M61BFLLFEATURESDrain Current I = 54A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.061(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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