APT32F120J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT32F120J
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 960 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 33 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 60 nS
Cossⓘ - Capacitancia de salida: 1340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
Paquete / Cubierta: SOT-227
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APT32F120J Datasheet (PDF)
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Otros transistores... APT30M85SVRG , APT30N60BC6 , APT30N60KC6 , APT30N60SC6 , APT31M100B2 , APT31M100L , APT31N60BCSG , APT31N60SCSG , IRF9640 , APT32M80J , APT33N90JCCU2 , APT33N90JCCU3 , APT34F100B2 , APT34F100L , APT34F60B , APT34F60BG , APT34F60S .
History: BL4N80-U
History: BL4N80-U



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