APT32F120J. Аналоги и основные параметры

Наименование производителя: APT32F120J

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 960 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 1200 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 33 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 60 ns

Cossⓘ - Выходная емкость: 1340 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm

Тип корпуса: SOT-227

Аналог (замена) для APT32F120J

- подборⓘ MOSFET транзистора по параметрам

 

APT32F120J даташит

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