APT33N90JCCU2 Todos los transistores

 

APT33N90JCCU2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT33N90JCCU2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 290 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 0.33 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SOT-227
 

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APT33N90JCCU2 Datasheet (PDF)

 ..1. Size:134K  microsemi
apt33n90jccu2.pdf pdf_icon

APT33N90JCCU2

APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25CSuper Junction MOSFET ID = 33A @ Tc = 25C SiC chopper diode Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch DFeatures - Ultra low RDSon - Low Miller capacitance G- Ultra low gate charge - Avalanche

 2.1. Size:134K  microsemi
apt33n90jccu3.pdf pdf_icon

APT33N90JCCU2

APT33N90JCCU3 ISOTOP Buck chopper VDSS = 900V RDSon = 120m max @ Tj = 25CSuper Junction MOSFET ID = 33A @ Tc = 25C SiC chopper diode Application AC and DC motor control D Switched Mode Power Supplies Features - Ultra low RDSon G- Low Miller capacitance S- Ultra low gate charge - Avalanche energy rated SiC Schottky Diode - Zero rev

 9.1. Size:113K  1
apt33gf120b2rd apt33gf120lrd.pdf pdf_icon

APT33N90JCCU2

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L

 9.2. Size:24K  apt
apt33gf120hr.pdf pdf_icon

APT33N90JCCU2

APT33GF120HR1200V 38AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

Otros transistores... APT30N60KC6 , APT30N60SC6 , APT31M100B2 , APT31M100L , APT31N60BCSG , APT31N60SCSG , APT32F120J , APT32M80J , MMD60R360PRH , APT33N90JCCU3 , APT34F100B2 , APT34F100L , APT34F60B , APT34F60BG , APT34F60S , APT34M60B , APT34M60S .

History: IXTH15N35MB | BUK7880-55 | BL4N80-U | APT32F120J | BL59N30-W

 

 
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