APT33N90JCCU2
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT33N90JCCU2
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 290
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 33
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 270
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 0.33
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12
Ohm
Package:
SOT-227
APT33N90JCCU2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT33N90JCCU2
Datasheet (PDF)
..1. Size:134K microsemi
apt33n90jccu2.pdf 
APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25CSuper Junction MOSFET ID = 33A @ Tc = 25C SiC chopper diode Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch DFeatures - Ultra low RDSon - Low Miller capacitance G- Ultra low gate charge - Avalanche
2.1. Size:134K microsemi
apt33n90jccu3.pdf
APT33N90JCCU3 ISOTOP Buck chopper VDSS = 900V RDSon = 120m max @ Tj = 25CSuper Junction MOSFET ID = 33A @ Tc = 25C SiC chopper diode Application AC and DC motor control D Switched Mode Power Supplies Features - Ultra low RDSon G- Low Miller capacitance S- Ultra low gate charge - Avalanche energy rated SiC Schottky Diode - Zero rev
9.1. Size:113K 1
apt33gf120b2rd apt33gf120lrd.pdf
APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L
9.2. Size:24K apt
apt33gf120hr.pdf
APT33GF120HR1200V 38AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
9.3. Size:84K apt
apt33gf120brg.pdf
APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
9.4. Size:142K apt
apt33gf120b2rd.pdf
APT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage D
9.5. Size:73K apt
apt33gf120br.pdf
APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
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