APT33N90JCCU3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT33N90JCCU3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 290 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 0.33 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: SOT-227

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APT33N90JCCU3 datasheet

 ..1. Size:134K  microsemi
apt33n90jccu3.pdf pdf_icon

APT33N90JCCU3

APT33N90JCCU3 ISOTOP Buck chopper VDSS = 900V RDSon = 120m max @ Tj = 25 C Super Junction MOSFET ID = 33A @ Tc = 25 C SiC chopper diode Application AC and DC motor control D Switched Mode Power Supplies Features - Ultra low RDSon G - Low Miller capacitance S - Ultra low gate charge - Avalanche energy rated SiC Schottky Diode - Zero rev

 2.1. Size:134K  microsemi
apt33n90jccu2.pdf pdf_icon

APT33N90JCCU3

APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25 C Super Junction MOSFET ID = 33A @ Tc = 25 C SiC chopper diode Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch D Features - Ultra low RDSon - Low Miller capacitance G - Ultra low gate charge - Avalanche

 9.1. Size:113K  1
apt33gf120b2rd apt33gf120lrd.pdf pdf_icon

APT33N90JCCU3

APT33GF120B2RD/LRD APT33GF120B2RD APT33GF120LRD 1200V 52A APT33GF120B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C L

 9.2. Size:24K  apt
apt33gf120hr.pdf pdf_icon

APT33N90JCCU3

APT33GF120HR 1200V 38A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated

Otros transistores... APT30N60SC6, APT31M100B2, APT31M100L, APT31N60BCSG, APT31N60SCSG, APT32F120J, APT32M80J, APT33N90JCCU2, MMIS60R580P, APT34F100B2, APT34F100L, APT34F60B, APT34F60BG, APT34F60S, APT34M60B, APT34M60S, APT34N80B2C3G