Справочник MOSFET. APT33N90JCCU3

 

APT33N90JCCU3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT33N90JCCU3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 290 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 33 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 270 nC
   trⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 0.33 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: SOT-227

 Аналог (замена) для APT33N90JCCU3

 

 

APT33N90JCCU3 Datasheet (PDF)

 ..1. Size:134K  microsemi
 apt33n90jccu3.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33N90JCCU3 ISOTOP Buck chopper VDSS = 900V RDSon = 120m max @ Tj = 25CSuper Junction MOSFET ID = 33A @ Tc = 25C SiC chopper diode Application AC and DC motor control D Switched Mode Power Supplies Features - Ultra low RDSon G- Low Miller capacitance S- Ultra low gate charge - Avalanche energy rated SiC Schottky Diode - Zero rev

 2.1. Size:134K  microsemi
 apt33n90jccu2.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33N90JCCU2 ISOTOP Boost chopper VDSS = 900V RDSon = 120m max @ Tj = 25CSuper Junction MOSFET ID = 33A @ Tc = 25C SiC chopper diode Application AC and DC motor control K Switched Mode Power Supplies Power Factor Correction Brake switch DFeatures - Ultra low RDSon - Low Miller capacitance G- Ultra low gate charge - Avalanche

 9.1. Size:113K  1
 apt33gf120b2rd apt33gf120lrd.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L

 9.2. Size:24K  apt
 apt33gf120hr.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33GF120HR1200V 38AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated

 9.3. Size:84K  apt
 apt33gf120brg.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq

 9.4. Size:142K  apt
 apt33gf120b2rd.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage D

 9.5. Size:73K  apt
 apt33gf120br.pdf

APT33N90JCCU3 APT33N90JCCU3

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq

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