APT37M100B2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT37M100B2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1135 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 37 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 305 nC
   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 825 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: TO-247

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APT37M100B2 Datasheet (PDF)

..1. Size:210K microsemi
apt37m100b2 apt37m100l.pdf

APT37M100B2 APT37M100L 1000V, 37A, 0.33 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and

9.1. Size:214K microsemi
apt37f50b apt37f50s.pdf

APT37F50B APT37F50S 500V, 37A, 0.15 Max, trr, 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. L

9.2. Size:375K inchange semiconductor
apt37f50b.pdf

isc N-Channel MOSFET Transistor APT37F50BFEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

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