APT37M100B2 Datasheet and Replacement
Type Designator: APT37M100B2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 37 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 825 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
Package: TO-247
APT37M100B2 substitution
APT37M100B2 Datasheet (PDF)
apt37m100b2 apt37m100l.pdf

APT37M100B2 APT37M100L 1000V, 37A, 0.33 MaxN-Channel MOSFET T-Ma xTMTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and
apt37f50b apt37f50s.pdf

APT37F50B APT37F50S 500V, 37A, 0.15 Max, trr, 250nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. D3PAKThis 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. L
apt37f50b.pdf

isc N-Channel MOSFET Transistor APT37F50BFEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
Datasheet: APT34M60S , APT34N80B2C3G , APT34N80LC3G , APT3565BN , APT3580BN , APT36N90BC3G , APT37F50B , APT37F50S , IRF640 , APT37M100L , APT38F50J , APT38F80B2 , APT38F80L , APT38M50J , APT38N60BC6 , APT38N60SC6 , APT39F60J .
History: FTK640F
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History: FTK640F



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