APT38N60SC6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT38N60SC6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 112 nC
   trⓘ - Tiempo de subida: 29 nS
   Cossⓘ - Capacitancia de salida: 2428 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
   Paquete / Cubierta: D3PAK

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APT38N60SC6 Datasheet (PDF)

..1. Size:147K microsemi
apt38n60bc6 apt38n60sc6.pdf

APT38N60BC6 APT38N60SC6 600V 38A 0.099 COOLMOSPower Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt RatedD Popular TO-247 or Surface Mount D3 package.GSMAXIMUM RATINGS All Ratings per die: TC = 25C unless otherwise specified. Symbol Parame

6.1. Size:376K inchange semiconductor
apt38n60bc6.pdf

isc N-Channel MOSFET Transistor APT38N60BC6FEATURESDrain Current I =38A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R =0.099(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

9.1. Size:117K microsemi
apt38f80b2 apt38f80l.pdf

APT38F80B2 APT38F80L 800V, 41A, 0.24 Max, trr 300nsN-Channel FREDFET T-MaxTO-264Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

9.2. Size:120K microsemi
apt38m50j.pdf

APT38M50J 500V, 38A, 0.10 MaxN-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci-tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

9.3. Size:209K microsemi
apt38f50j.pdf

APT38F50J 500V, 38A, 0.10 Max, trr 280nsN-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high

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