APT38N60SC6 - описание и поиск аналогов

 ..1. Size:147K  microsemi
 apt38n60bc6 apt38n60sc6.pdf 

APT38N60BC6 APT38N60SC6 600V 38A 0.099 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low RDS(ON) D3PAK Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated Extreme dv/dt Rated D Popular TO-247 or Surface Mount D3 package. G S MAXIMUM RATINGS All Ratings per die TC = 25 C unless otherwise specified. Symbol Parame

 6.1. Size:376K  inchange semiconductor
 apt38n60bc6.pdf 

isc N-Channel MOSFET Transistor APT38N60BC6 FEATURES Drain Current I =38A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.099 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 9.1. Size:117K  microsemi
 apt38f80b2 apt38f80l.pdf 

APT38F80B2 APT38F80L 800V, 41A, 0.24 Max, trr 300ns N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt cap

 9.2. Size:120K  microsemi
 apt38m50j.pdf 

APT38M50J 500V, 38A, 0.10 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ga

 9.3. Size:209K  microsemi
 apt38f50j.pdf 

APT38F50J 500V, 38A, 0.10 Max, trr 280ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high