APT40M70B2VFRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT40M70B2VFRG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 520 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 57 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 1140 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TO-247

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APT40M70B2VFRG datasheet

 ..1. Size:148K  apt
 apt40m70b2vfrg apt40m70lvfrg.pdf pdf_icon

APT40M70B2VFRG

400V 57A 0.070 APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance

 6.1. Size:62K  apt
 apt40m70lvr.pdf pdf_icon

APT40M70B2VFRG

APT40M70LVR 400V 57A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe

 6.2. Size:69K  apt
 apt40m70jvr.pdf pdf_icon

APT40M70B2VFRG

APT40M70JVR 400V 53A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 6.3. Size:70K  apt
 apt40m70jvfr.pdf pdf_icon

APT40M70B2VFRG

APT40M70JVFR 400V 53A 0.070 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster

MOSTRAR MÁS

Otros transistores... APT4014SVFRG, APT4016BVFRG, APT4016SVFRG, APT4018BN, APT4020BVFRG, APT4065BN, APT4080BN, APT40M35JVFR, AON7408, APT40M70JVFR, APT40M70LVFRG, APT40N60B2CF, APT40N60LCF, APT41F100J, APT41M80B2, APT41M80L, APT42F50B