APT4530AN Todos los transistores

 ..1. Size:375K  apt
 apt4530an apt5025an apt5030an.pdf

 9.1. Size:370K  apt
 apt4525an.pdf

 9.2. Size:457K  apt
 apt45gp120jdq220.pdf

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

 9.3. Size:436K  apt
 apt45gp120b2dq2g.pdf

TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for

 9.4. Size:196K  apt
 apt45gp120b2df2.pdf

APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES APT45GP120B2DF2 1200V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C Low Conduction Loss 10

 9.5. Size:205K  apt
 apt45gp120jdf2.pdf

TYPICAL PERFORMANCE CURVES APT45GP120JDF2 APT45GP120JDF2 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss

 9.6. Size:457K  apt
 apt45gp120jdq2.pdf

TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592

 9.7. Size:97K  apt
 apt45gp120j.pdf

APT45GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate

 9.8. Size:102K  apt
 apt45gp120bg.pdf

APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge

 9.9. Size:88K  apt
 apt45gp120b.pdf

APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge

 9.10. Size:213K  microsemi
 apt45m100j.pdf

APT45M100J 1000V, 45A, 0.18 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon