APT4530AN Specs and Replacement
Type Designator: APT4530AN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V
Qg ⓘ - Total Gate Charge: 83 nC
tr ⓘ - Rise Time: 27 nS
Cossⓘ -
Output Capacitance: 522 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO-3
- MOSFET ⓘ Cross-Reference Search
APT4530AN datasheet
9.2. Size:457K apt
apt45gp120jdq220.pdf 
TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒
9.3. Size:436K apt
apt45gp120b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT45GP120B2DQ2(G) 1200V APT45GP120B2DQ2 APT45GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for ... See More ⇒
9.4. Size:196K apt
apt45gp120b2df2.pdf
APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES APT45GP120B2DF2 1200V POWER MOS 7 IGBT TM T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C Low Conduction Loss 10... See More ⇒
9.5. Size:205K apt
apt45gp120jdf2.pdf
TYPICAL PERFORMANCE CURVES APT45GP120JDF2 APT45GP120JDF2 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss ... See More ⇒
9.6. Size:457K apt
apt45gp120jdq2.pdf
TYPICAL PERFORMANCE CURVES APT45GP120JDQ2 1200V APT45GP120JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 ... See More ⇒
9.7. Size:97K apt
apt45gp120j.pdf
APT45GP120J 1200V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency "UL Recognized" ISOTOP switchmode power supplies. C Low Conduction Loss 50 kHz operation @ 800V, 16A Low Gate... See More ⇒
9.8. Size:102K apt
apt45gp120bg.pdf
APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge ... See More ⇒
9.9. Size:88K apt
apt45gp120b.pdf
APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C switchmode power supplies. E Low Conduction Loss 100 kHz operation @ 800V, 16A C Low Gate Charge ... See More ⇒
9.10. Size:213K microsemi
apt45m100j.pdf
APT45M100J 1000V, 45A, 0.18 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon ... See More ⇒
Detailed specifications: APT42F50B, APT42F50S, APT43F60B2, APT43F60L, APT43M60B2, APT43M60L, APT44F80B2, APT44F80L, 12N60, APT45M100J, APT47F60J, APT47M60J, APT47N60BC3G, APT47N60BCFG, APT47N60SC3G, APT47N65BC3G, APT48M80B2
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