APT5010B2LLG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT5010B2LLG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 520 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 46 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 895 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: TO-247

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APT5010B2LLG Datasheet (PDF)

..1. Size:170K apt
apt5010b2llg apt5010lllg.pdf

APT5010B2LLAPT5010LLL500V 46A 0.100B2LLR POWER MOS 7 MOSFETT-MAXTO-264Power MOS 7 is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7 by significantly lowering RDS(ON)and Qg. Power MOS 7 combines lower conduction and switching lossesLLL

3.1. Size:68K apt
apt5010b2ll.pdf

APT5010B2LLAPT5010LLL500V 46A 0.100WB2LLTM POWER MOS 7Power MOS 7TM is a new generation of low loss, high voltage, N-ChannelT-MAXTO-264enhancement mode power MOSFETS. Both conduction and switchinglosses are addressed with Power MOS 7TM by significantly lowering RDS(ON)and Qg. Power MOS 7TM combines lower conduction and switching lossesalong with exceptionally fast swi

3.2. Size:375K inchange semiconductor
apt5010b2ll.pdf

isc N-Channel MOSFET Transistor APT5010B2LLFEATURESDrain Current I = 46A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R =0.1(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

4.1. Size:64K apt
apt5010b2lc.pdf

APT5010B2LCAPT5010LLC500V 47A 0.100WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss andCrss. Lower gate charge coupled with Power MOS VITM optimized gateLLClayout, delivers exceptionally fast

4.2. Size:117K apt
apt5010b2lc-47434900.pdf

APT5010B2LC500V 47A 0.100 WTMPOWER MOS VIPower MOS VITM is a new generation of low gate charge, high voltageT-MAXN-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and C .rssLower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.D L

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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