APT5010B2LLG - описание и поиск аналогов

APT5010B2LL APT5010LLL 500V 46A 0.100 B2LL R POWER MOS 7 MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses LLL

APT5010B2LL APT5010LLL 500V 46A 0.100W B2LL TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel T-MAX TO-264 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast swi

isc N-Channel MOSFET Transistor APT5010B2LL FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R =0.1 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

APT5010B2LC APT5010LLC 500V 47A 0.100W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate LLC layout, delivers exceptionally fast

APT5010B2LC 500V 47A 0.100 W TM POWER MOS VI Power MOS VITM is a new generation of low gate charge, high voltage T-MAX N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and C . rss Lower gate charge coupled with Power MOS VITM optimized gate layout, delivers exceptionally fast switching speeds. D L