APT5014B2VRG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5014B2VRG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 737 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de APT5014B2VRG MOSFET
- Selecciónⓘ de transistores por parámetros
APT5014B2VRG datasheet
apt5014b2vrg.pdf
APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo
apt5014b2vr.pdf
APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo
apt5014b2vfrg apt5014lvfrg.pdf
APT5014B2VFR APT5014LVFR 500V 37A 0.140 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.
apt5014b2lc.pdf
APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast
Otros transistores... APT4F120S , APT4M120K , APT5010B2FLLG , APT5010B2LLG , APT5010LFLLG , APT5010LLLG , APT5012JN , APT5014B2VFRG , 5N60 , APT5014BFLLG , APT5014BLLG , APT5014LVFRG , APT5014SFLLG , APT5014SLLG , APT5015BVFRG , 2SK1982-01MR , BUK457-400A .
History: 2SK68A | XP161A11A1PR-G | 15N12 | 2SK2916 | 2SK2602 | BSC252N10NSF | EMF03N02HR
History: 2SK68A | XP161A11A1PR-G | 15N12 | 2SK2916 | 2SK2602 | BSC252N10NSF | EMF03N02HR
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