2SK125 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK125
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
|Id|ⓘ - Corriente continua de drenaje: 0.1 A
Tjⓘ - Temperatura máxima de unión: 120 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 35 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de 2SK125 MOSFET
2SK125 Datasheet (PDF)
2sk1254.pdf

2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa
rej03g0917 2sk1254lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
2sk1259.pdf

Power F-MOS FETs 2SK12592SK1259Silicon N-Channel Power F-MOSUnit : mm 3.3 0.2 Features20.0 0.5 5.0 0.33.0Low ON-resistance RDS(on) : RDS(on)1= 0.012(typ)High-speed switching : tf = 700ns(typ)No secondary breakdownLow-voltage drive1.5 Applications1.52.0 0.3DC-DC converter2.7 0.33.0 0.3Non-contact relay1.0 0.2 0.6 0.2Solenoid drive
Otros transistores... APT5014BLLG , APT5014LVFRG , APT5014SFLLG , APT5014SLLG , APT5015BVFRG , 2SK1982-01MR , BUK457-400A , BUK457-400B , IRF830 , 2SJ410 , 2SK2518-01MR , 2SK4027 , APT5016BFLLG , APT5016BLLG , APT5016SFLLG , APT5017SVFRG , APT5018BFLLG .
History: 2SK1206 | IXTH90P10P | STF32N65M5
History: 2SK1206 | IXTH90P10P | STF32N65M5



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