2SK125 Datasheet. Specs and Replacement
Type Designator: 2SK125 📄📄
Type of Transistor: JFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 120 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 35 Ohm
Package: TO92
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2SK125 substitution
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2SK125 datasheet
2sk1254.pdf
2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa... See More ⇒
rej03g0917 2sk1254lsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒
2sk1259.pdf
Power F-MOS FETs 2SK1259 2SK1259 Silicon N-Channel Power F-MOS Unit mm 3.3 0.2 Features 20.0 0.5 5.0 0.3 3.0 Low ON-resistance RDS(on) RDS(on)1= 0.012 (typ) High-speed switching tf = 700ns(typ) No secondary breakdown Low-voltage drive 1.5 Applications 1.5 2.0 0.3 DC-DC converter 2.7 0.3 3.0 0.3 Non-contact relay 1.0 0.2 0.6 0.2 Solenoid drive ... See More ⇒
Detailed specifications: APT5014BLLG, APT5014LVFRG, APT5014SFLLG, APT5014SLLG, APT5015BVFRG, 2SK1982-01MR, BUK457-400A, BUK457-400B, 2N60, 2SJ410, 2SK2518-01MR, 2SK4027, APT5016BFLLG, APT5016BLLG, APT5016SFLLG, APT5017SVFRG, APT5018BFLLG
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