RF1S9630SM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RF1S9630SM
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Corriente continua de drenaje |Id|: 6.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Resistencia entre drenaje y fuente RDS(on): 0.8 Ohm
Paquete / Cubierta: TO263AB
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RF1S9630SM Datasheet (PDF)
irf9630 rf1s9630sm.pdf
IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a
irf9640 rf1s9640sm.pdf
IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
irf9540 rf1s9540sm.pdf
IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava
irf9530 rf1s9530sm.pdf
IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the
Otros transistores... RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM , IRFB3306 , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L .