All MOSFET. RF1S9630SM Datasheet

 

RF1S9630SM MOSFET. Datasheet pdf. Equivalent


   Type Designator: RF1S9630SM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO263AB

 RF1S9630SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RF1S9630SM Datasheet (PDF)

 ..1. Size:103K  fairchild semi
 irf9630 rf1s9630sm.pdf

RF1S9630SM RF1S9630SM

IRF9630, RF1S9630SMData Sheet January 20026.5A, 200V, 0.800 Ohm, P-Channel Power FeaturesMOSFETs 6.5A, 200VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.800field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown a

 6.1. Size:406K  harris semi
 irf9630 irf9631 irf9632 irf9633 rf1s9630.pdf

RF1S9630SM RF1S9630SM

 8.1. Size:103K  fairchild semi
 irf9640 rf1s9640sm.pdf

RF1S9630SM RF1S9630SM

IRF9640, RF1S9640SMData Sheet January 200211A, 200V, 0.500 Ohm, P-Channel Power FeaturesMOSFETs 11A, 200VThese are P-Channel enhancement mode silicon-gate rDS(ON) = 0.500power field-effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 9.1. Size:99K  fairchild semi
 irf9540 rf1s9540sm.pdf

RF1S9630SM RF1S9630SM

IRF9540, RF1S9540SMData Sheet January 200219A, 100V, 0.200 Ohm, P-Channel Power FeaturesMOSFETs 19A, 100VThese are P-Channel enhancement mode silicon gate power rDS(ON) = 0.200field effect transistors. They are advanced power MOSFETs Single Pulse Avalanche Energy Rateddesigned, tested, and guaranteed to withstand a specified level of energy in the breakdown ava

 9.2. Size:414K  harris semi
 rf1s9540.pdf

RF1S9630SM RF1S9630SM

 9.3. Size:68K  intersil
 irf9530 rf1s9530sm.pdf

RF1S9630SM RF1S9630SM

IRF9530, RF1S9530SMData Sheet July 1999 File Number 2221.412A, 100V, 0.300 Ohm, P-Channel Power FeaturesMOSFETs 12A, 100VThese are P-Channel enhancement mode silicon gate rDS(ON) = 0.300power field effect transistors. They are advanced power Single Pulse Avalanche Energy RatedMOSFETs designed, tested, and guaranteed to withstand aspecified level of energy in the

Datasheet: RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , RF1S70N03SM , RF1S70N06SM , RF1S9530SM , RF1S9540SM , AO3401 , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM , RFD12N06RLE , RFD12N06RLESM , RFD14N05 , RFD14N05L .

 

 
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